, una. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC4690 description ? collector-emitter breakdown voltage- : v(br)ceo= 140v(min) ? collector-emitter saturation voltage- : vce(sat)= 2.0v(max)@ lc= 7a ? complement to type 2sa1805 applications ? power amplifier applications ? recommend for 70w high fidelity audio frequency amplifier output stage applications absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value 140 140 5 10 20 1 80 150 -55-150 unit v v v a a a w 'c ?c ?,;; pih 1 2 3 x 1.base 2. collector 3- emitter to-3pfa package ?+ ? t" a k t v ml1*! :'^ u f \? ***^l. -?? n? ?- _?. ^ dim a b c d f h j k l n q r s t u mm min 20.70 14.70 4.80 0.90 sjo 1.70 0.50 16.40 1.90 10.30 5.60 t.30 3.10 8.70 0.55 max 21.30 15jjo 5.20 1.10 j.40 430 0.70 17.00 2.10 11.00 6.00 2.20 150 9.30 0.75 ? ? t in.i senii-uonductors reserves tfe right lo change test conditions. parametcflimits and package dimensions without notice. information furnished hy nj semi-conductors is believed to be both accurate and reliable at the time of aoins lo press. i lowever. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC4690 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(on) icbo iebo hpe-i hpe-2 fr cob parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc= 50ma; ib= 0 lc= 7a; ib= 0.7a lc= 5a; vce= 5v vcb=140v;ie=0 veb= 5v; lc= 0 lc= 1a;vce=5v lc= 5a; vce= 5v lc=1a;vce=5v le=0;vce=10v, ftese1mhz min 140 55 35 typ. 30 220 max 2.0 1.5 5.0 5.0 160 unit v v v ua ua mhz pf hpe-1 classifications r 55-110 o 80-160
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